pSemi Unveils PE423213 Reflective RF Switch
The 0.3 to 10.6 GHz switch uses pSemi's UltraCMOS+ process to pair low insertion loss with ultra-low power consumption in a compact package.
Updated on Nov. 4, 2026 in Semiconductors
pSemi, a Murata company, introduced the PE423213, a reflective single-pole double-throw RF switch that operates from 0.3 to 10.6 GHz. The company will show the device for the first time at electronica 2026 in Munich.
Why it matters
RF front-end designers face pressure to cut power consumption, reduce board space, and simplify circuit architectures. The PE423213 is positioned to address those constraints in a single component.
Typical supply current is 95 nA and switching time is 100 ns, with insertion loss of 0.4 dB at 6 GHz and isolation of 27 dB at 6 GHz. The 1.6 x 1.6 mm DFN package carries 2 kV ESD protection and operates from -40°C to +105°C, though the source does not include independent validation of these typical values.
The players
pSemi
pSemi is a semiconductor company that is a subsidiary of Japanese electronics manufacturer Murata, known for RF and power-management chips built on silicon-on-insulator processes.
electronica
electronica is a major international trade fair for electronic components, systems, and applications held biennially in Munich, Germany.
The details
The switch is built on pSemi's UltraCMOS+ silicon-on-insulator process and incorporates HaRP technology enhancements. It is housed in a 6-lead DFN package and combines wide frequency coverage, low insertion loss, fast switching, and ultra-low power draw in one device.
Timeline
November 4, 2026: pSemi announces the PE423213.
November 10-13, 2026: electronica 2026 is held at Messe München in Munich, where the switch will be shown for the first time.
The Tech Race
The PE423213 extends pSemi's UltraCMOS+ silicon-on-insulator line, adding HaRP technology enhancements to a wide-band reflective switch. It positions the company against other RF front-end suppliers competing on power draw and board footprint.
For engineers designing RF front ends, the switch's 95 nA supply current and 100 ns switching time may reduce power budgets in battery-powered devices. Designers evaluating components for wide-band systems can review the 0.3 to 10.6 GHz operating range once samples and datasheets are available.
The takeaway
Designers weighing RF switch options should compare insertion loss and isolation across their target frequency band rather than relying on a single headline range. Verifying typical figures against the full datasheet at electronica 2026 will clarify fit for a specific design.
Further reading
Explore more Semiconductors coverage for context on RF switch design and chip architecture trends.
