AVL and VisIC Integrate GaN Inverter into EV

The companies successfully combined GaN power modules into a vehicle demonstrator to improve electric vehicle efficiency.

Updated on Oct. 26, 2026 in Electric Vehicles

Isometric editorial illustration of a modular semiconductor power inverter with geometric cooling fins and circuitry, evoking advanced automotive engineering.
AVL and VisIC Technologies have successfully integrated D3GaN power modules into a vehicle demonstrator, aiming to reduce energy losses in electric vehicles. AI Illustration. Upload story photo >

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AVL and VisIC Technologies have integrated their D3GaN power modules into an electric vehicle demonstrator. The prototype utilizes the AVL PI850e Inverter Development Platform alongside NXP drivers to enhance automotive power performance.

Why it matters

This development aims to solve key electric vehicle efficiency challenges by reducing energy losses while maintaining high power density. By utilizing GaN-on-silicon technology, the companies hope to improve current industry performance standards.

Testing during the WLTC drive cycle demonstrated an inverter efficiency of 99.67% at 10 kHz and 99.8% at 5 kHz. The technology is engineered for compatibility with 200 mm and 300 mm silicon foundries.

The players

AVL

This global engineering company specializes in the development, simulation, and testing of powertrain systems for vehicles.

VisIC Technologies

This semiconductor company develops gallium nitride power devices designed specifically for the automotive market.

NXP

This semiconductor manufacturer provides automotive-grade driver components used to power the inverter systems.

The details

The demonstrator platform integrates an e-axle, advanced power electronics, and proprietary control software to manage switching and conduction losses. The system is designed to support future advancements, including the transition toward 800 V power modules.

Timeline

  1. October 26, 2026: The integration of the power modules was publicly reported following testing.

Roadmap

The integration of D3GaN power modules represents a strategic push to surpass current silicon carbide (SiC) inverters in efficiency and power density. This advancement highlights a broader shift toward GaN-on-silicon platforms as automakers seek more efficient 800 V architectures.

These improvements in inverter efficiency could eventually lead to longer ranges and faster charging times for future electric vehicle models. Drivers may benefit from more power-dense electronics that reduce overall energy consumption during daily commutes.

The takeaway

The move toward high-efficiency GaN power modules aims to optimize electric vehicle performance beyond current technological limits. Industry players are actively pushing these efficiency benchmarks to support the transition toward higher-voltage vehicle systems.

Further reading

Learn more about the latest innovations in Electric Vehicles.

Source note: This article includes information reported by CHARGED Electric Vehicles Magazine.

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