Renesas Launches New Gallium Nitride Device Families
The company introduced two new GaN transistor series designed to improve power efficiency in industrial and data center systems.
Updated on Oct. 21, 2026 in Semiconductors
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Renesas has unveiled two new families of gallium nitride (GaN) devices aimed at boosting performance in industrial and data center applications. The lineup includes a 650 V FET and a series of 100 V E-mode transistors designed for higher efficiency.
Why it matters
These devices use advanced cooling and material properties to reduce energy consumption and board footprint, which are critical requirements for the dense power demands of modern AI infrastructure.
The 650 V TP65H020G4PLSGBD features a 20 mΩ resistance rating in an 8x8 mm package, providing a 57% footprint reduction versus TOLT. The 100 V E-mode series ranges from 5 mΩ to 1.2 mΩ resistance.
The players
Renesas
Renesas is a global semiconductor manufacturer specializing in microcontrollers, analog, power, and SoC products for automotive and industrial markets.
The details
The 650 V device achieves its normally-off operation by pairing a depletion-mode GaN HEMT with a low-voltage silicon MOSFET. The 100 V series utilizes footprints matched to equivalent silicon counterparts, allowing for simplified integration into existing designs.
Timeline
October 21, 2026: Renesas announced the new GaN devices.
Mid-2027: Mass production of the 650 V device is scheduled.
The Tech Race
This release underscores the accelerating industry shift toward gallium nitride as a replacement for legacy silicon in high-density computing. By challenging existing standards like TOLT packaging, Renesas aims to capture more market share in the power-hungry AI data center sector.
For engineers and designers, these new components offer a way to shrink board layouts while increasing the power density of their hardware. These improvements can lead to more compact data center power supplies and improved energy efficiency for high-performance industrial equipment.
The takeaway
Gallium nitride continues to outperform traditional silicon in switching efficiency for high-frequency applications. Implementing these newer power devices can help designers meet the increasing energy density requirements of current data center architectures.
What happens next
Mass production of the TP65H020G4PLSGBD 650 V device is scheduled for mid-2027.
Further reading
For more information on the latest industry developments, visit our Semiconductors section.
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