Renesas Launched New GaN Power Transistor Family

The 100-V enhancement-mode FETs aim to increase power density for AI data centers and robotics.

Updated on Oct. 14, 2026 in Semiconductors

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Renesas Electronics introduced a new family of 100-V GaN transistors, aiming to enhance power efficiency for AI data centers and industrial robotics. AI Illustration. Upload story photo >

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Renesas Electronics has introduced a family of four 100-V enhancement-mode discrete gallium nitride (GaN) power transistors. These new components are designed to boost power efficiency in high-density applications.

Why it matters

The company developed these transistors to address the growing power demands of AI data centers, humanoid robotics, and industrial factory automation. They offer significant improvements in switching losses and overall power density compared to traditional alternatives.

The new 100-V GaN FETs achieve up to 70% lower switching losses and support twice the system-level power density of existing solutions. Available models feature on-resistances ranging from 1.2 mΩ to 5 mΩ in FCLGA packages.

The players

Renesas Electronics

A prominent global supplier of semiconductor products, including microcontrollers, analog, power, and SoC solutions.

The details

Engineered with a silicon-compatible footprint, the FCLGA packages allow engineers to migrate from silicon MOSFET layouts without significant PCB rework. The four-model lineup includes the RTP100E005G1FL, RTP100E2P6G1FL, RTP100E1P8G1FL-DSC, and RTP100E1P2G1FL-DSC.

Timeline

  1. The new low-voltage GaN power transistors became available on October 14, 2026.

The Tech Race

The industry is increasingly shifting from traditional silicon MOSFET layouts to gallium nitride materials to handle higher thermal loads. This development positions Renesas to compete more effectively in the high-performance computing and robotics power markets.

Developers and systems engineers can now improve hardware efficiency and reduce physical component footprints in power systems. These transistors enable more compact designs for AI infrastructure and advanced robotics without requiring complete circuit board redesigns.

The takeaway

Advancements in GaN technology provide essential power density improvements for the next generation of industrial and computing hardware. Manufacturers should evaluate their current power stages to determine if transitioning to these low-resistance FCLGA packages could enhance system performance.

Further reading

For more information on the evolving landscape of power electronics, visit our Semiconductors section.

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