Researchers Transfer Gallium Nitride onto Tungsten
The transition to tungsten substrates significantly reduces thermal resistance in high-power semiconductor devices.
Updated on Oct. 22, 2026 in Semiconductors
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In 2026, researchers published findings in Applied Physics Letters detailing a method to improve gallium nitride (GaN) thermal performance. By transferring GaN membranes to tungsten, the team achieved more efficient heat dissipation for power electronics.
Why it matters
High thermal resistance in traditional sapphire substrates often limits the power handling capacity of semiconductor devices. This new substrate integration allows for higher power switching performance in advanced electronics.
The GaN-on-tungsten devices feature a 300nm silicon nitride passivation layer and utilize Raman nanoparticle thermometry with 50nm titanium dioxide markers. Measurements were derived by tracking the 143/cm frequency signal from these nanoparticles.
The players
University of Bristol
A public research university in the United Kingdom that leads significant investigations into advanced semiconductor materials and thermal management.
Ferdinand-Braun-Institut
A German research institute focused on the development of high-frequency and power electronic components based on compound semiconductors.
The details
The process involved using laser lift-off to remove sapphire substrates, followed by transient liquid phase bonding with silver and tin to attach the GaN to tungsten. This configuration enables a fully vertical current flow path, enhancing the electrical efficiency of the power diodes.
Timeline
The findings were published in Applied Physics Letters in 2026.
The Tech Race
This development represents a major shift in the ongoing effort to surpass the physical constraints of sapphire in power electronics. By choosing tungsten as a thermomechanical match, researchers are working to displace older substrate technologies in high-power switching applications.
Improved thermal management in semiconductors will eventually enable more efficient and compact power supplies for consumer electronics and electric vehicles. Users should expect better device durability and performance as these materials scale into commercial components.
The takeaway
Optimizing substrate selection is essential for the evolution of next-generation power semiconductor hardware. Material engineering breakthroughs like this help ensure that smaller, more powerful electronic devices can operate reliably without overheating.
Further reading
Learn more about the latest advancements in Semiconductors.
Source note: This article includes information reported by Semiconductor Today.
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