United Monolithic Semiconductors Reveals New GaN Technology
The company showcased its 0.1 µm GaN-on-SiC process technology at the recent European Microwave Week in London.
Updated on Oct. 16, 2026 in Semiconductors
United Monolithic Semiconductors (UMS) introduced its GH10-10 process technology, a 0.1 µm GaN-on-SiC solution designed for high power density. The platform was highlighted during the European Microwave Week 2026, where UMS demonstrated a 71-76 GHz high-power amplifier.
Why it matters
The GH10-10 process was developed to provide superior power density and efficiency for RF and millimeter-wave MMICs. This technology allows designers to achieve higher output power levels in wideband amplifier designs across microwave frequency bands.
The GH10-10 technology features a 0.1 µm feature size and achieves a power density of 3 W/mm, with device models validated up to 90 GHz. The CHA6224-98F amplifier delivers 21 dB of gain and 2 W of output power across the 20-40 GHz range.
The players
United Monolithic Semiconductors
This company specializes in the design and manufacture of radio frequency and millimeter-wave monolithic integrated circuits.
The details
At the exhibition, UMS demonstrated a high-power amplifier capable of 2.5 W output power within the 71-76 GHz band. The company is now working on the CHA6220-QGB high power amplifier, which is designed to operate in the 2-20 GHz range.
Timeline
European Microwave Week 2026 took place from 4-9 October 2026.
The Tech Race
The transition to high-frequency millimeter-wave communications is driving the adoption of advanced semiconductor materials like gallium nitride on silicon carbide. This development allows UMS to remain competitive against rival firms that are also scaling down feature sizes to improve power efficiency in compact RF systems.
Engineers and hardware designers can now access this high-density process through an open foundry platform to enhance their own wideband amplifier designs. Improved power efficiency in these components may lead to more capable communication hardware that supports higher data transmission frequencies.
The takeaway
The introduction of the GH10-10 process demonstrates a clear trend toward higher power density in millimeter-wave frequency bands. Designers should monitor UMS foundry updates to determine how these high-frequency validated models can integrate into upcoming telecommunications projects.
Further reading
For more on evolving material science in chip manufacturing, visit the Semiconductors section.
More information
View the CHA6220-QGB amplifier information for technical specifications.
Source note: This article includes information reported by Everythingrf.
