U.S. Army Awarded ALATTIS Contract to Navitas Semiconductor

The Army tasked Navitas with developing advanced 10 kV silicon carbide power semiconductor technology.

Updated on Sept. 28, 2026 in Semiconductors

Isometric editorial illustration of a single circular semiconductor wafer on a sterile laboratory surface, representing advanced power electronic technology. — The U.S. Army has awarded Navitas Semiconductor a contract to develop 10 kV silicon carbide power semiconductor technology for national defense infrastructure. AI Illustration. Upload story photo >

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The U.S. Army selected Navitas Semiconductor to lead the ALATTIS program, an initiative focused on domestic production of 10 kV silicon carbide power devices. The project aims to enhance high-power electronics capabilities for critical national defense and infrastructure applications.

Why it matters

The program seeks to bolster domestic manufacturing of high-voltage semiconductors to support modernized defense electronics. By developing these specialized components, the military hopes to overcome limitations in current power electronics infrastructure.

The project utilizes a trench-assisted planar architecture to develop 10 kV devices. Navitas currently maintains a product portfolio ranging from 650 V to 6.5 kV with over 300 patents issued or pending.

The players

Navitas Semiconductor

Headquartered in Torrance, California, this firm specializes in power semiconductor technology and gallium nitride and silicon carbide components.

Army Research Laboratory

This organization serves as the U.S. Army's corporate research laboratory and is a major sponsor of defense-related technology development.

Joint Experimentation and Technology Accelerator

This entity provides support for initiatives intended to fast-track the deployment of emerging technologies for military use.

The details

The ALATTIS program, sponsored by the Army Research Laboratory and the Joint Experimentation and Technology Accelerator, utilizes iterative design and testing to validate manufacturing. The effort will specifically accelerate the creation of 10 kV SiC insulated-gate bipolar transistors.

Navitas released 6.5 kV SiC thyristors in 2010.
The company released 10-15 kV PiN diodes in 2012.
Navitas commercially released 6.5 kV silicon carbide MOSFETs in 2021.
The U.S. Army awarded the ALATTIS contract to Navitas on September 28, 2026.

The Tech Race

This program extends the development of 10 kV silicon carbide insulated-gate bipolar transistors to meet defense needs. It marks a push to move this specialized power technology from laboratory research into an established domestic manufacturing pipeline.

While primarily focused on defense infrastructure, the successful domestication of 10 kV power technology could eventually lower costs and improve reliability for industrial energy grids. Consumers may see indirect benefits through more efficient and resilient national power distribution systems.

The takeaway

The move toward 10 kV silicon carbide capability signals a strategic shift in high-power electronics manufacturing. Improving domestic access to these components is vital for securing both military and civilian infrastructure against modern power demands.